PART |
Description |
Maker |
IRG4BC30W |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
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IRF[International Rectifier]
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25MT060WF |
FULL-BRIDGEIGBTMTP FULL-BRIDGE IGBT MTP 600V Warp 20-100 kHz Full-Bridge IGBT in a MTP package
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InternationalRectifier IRF[International Rectifier]
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AM29841A/BKA AM29841A/B3A AM29843PC AM29843ALC AM2 |
600V Low-Vceon Copack IGBT in a TO-220 FullPak package; Similar to IRGIB7B60KD with Lead Free Packaging 600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package; A IRGS10B60KD with Standard Packaging 600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package; Similar to IRG4BC15UD-L with Lead Free Packaging 600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package; A IRGSL6B60KD with Standard Packaging 600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package; Similar to IRGSL15B60KD with Lead Free Packaging 1200V UltraFast 4-20 kHz CoPack IGBT in a TO-274AA package; Similar to IRG4PSH71UD with Lead Free Packaging 600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package; A IRGS6B60KD with Standard Packaging 600V Warp2 150kHz Copack IGBT in a TO-247AC package; A IRGP50B60PD1 with Standard Packaging 600V UltraFast Copack Trench IGBT in a TO-247AD package with Ultra-Low VF Diode for Induction Heating and Soft Switching Apps; A IRGP4068D-EPBF with Standard Packaging 600V HyperFast 1-8 kHz Co-Pack IGBT in a D2-Pak package; A IRG4BC30FD-S with Standard Packaging 600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package; A IRG4BC15UD-L with Standard Packaging 600V Low-Vceon Non Punch Through Copack IGBT in a D2-Pak package; A IRGS4B60KD1 with Standard Packaging 1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AD package; Similar to IRG4PH40UD2-E with Lead Free Packaging 10位D型锁存器 600V UltraFast 8-25 kHz Copack IGBT in a D-Pak package; Similar to IRG4RC10KD with Lead Free Packaging 9位D型锁存器 600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package; A IRGB6B60KD with Standard Packaging 9位D型锁存器
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Duracell TT electronics Semelab, Ltd. NXP Semiconductors N.V.
|
GB100DA60UP |
Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A
|
Vishay Siliconix
|
IRG4BC20S |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)
|
IRF[International Rectifier]
|
IRG4BC30U |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
IRG4PC50K |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V,Vce(on)typ.=1.84V, @Vge=15V, Ic=30A)
|
IRF[International Rectifier]
|
IRGS30B60KPBF IRGSL30B60KPBF |
600V UltraFast 10-30 kHz IGBT in a D2-Pak package 600V UltraFast 10-30 kHz IGBT in a TO-262 package
|
International Rectifier
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IRG4RC10U IRG4RC10UTR IRG4RC10UTRL IRG4RC10UTRR |
600V UltraFast 8-60 kHz Discrete IGBT in a D-Pak package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
|
International Rectifier
|
IRG4RC10KD IRG4RC10 IRG4RC10KDTRR |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 5A条一(c)|52AA INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A) 600V UltraFast 8-25 kHz Copack IGBT in a D-Pak package
|
International Rectifier, Corp. IRF[International Rectifier]
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IRG4PC40FD IRG4PC40 IRG4PC40FDPBF |
600V Fast 1-8 kHz Copack IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
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IRF[International Rectifier]
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